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MACOM Introduces New GaN-on-Silicon Carbide (SiC) Power Amplifier Product Line

By Macom

Lowell, Massachusetts, August 5, 2020MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of semiconductor solutions, today announced at the virtual International Microwave Symposium (IMS) the introduction of its new Gallium Nitride on Silicon Carbide (GaN-on-SiC) power amplifier product line, which it is branding MACOM PURE CARBIDE™. The company also announced the introduction of the first two new products in the product line, the MAPC-A1000 and the MAPC-A1100. “This new product line significantly enhances the capability of our existing RF Power product portfolio,” said Stephen G. Daly, President and Chief Executive Officer. “GaN on Silicon Carbide is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE™ power amplifier solutions.”

  • The MAPC-A1000 is a high power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz and is housed in a surface mount plastic package. The easy-to-use general purpose amplifier integrates an input match which simplifies the customer’s design-in effort. The amplifier can deliver more than 25 W (44dBm) at greater than 50% efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth.
  • The MAPC-A1100 is a high power GaN-on-SiC amplifier designed to operate up to 3.5 GHz. The device is capable of supporting both CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package.

The two new general purpose amplifier products are ideal for use in avionics, high power mobile radios, wireless systems and test instrumentation.